1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1:base 2 : collector 3 : emitter features low saturation voltage:v ce(sat) =0.5v(max.)(at ic=4a) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current i c 7a base current i b 1a collector power dissipation 1.5 w tc=25 40 w junction temperature t j 150 storage temperature t stg -55to+125 p c sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors product specification 2SD2414 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =100v,i e =0 5 a emitter cut-off current i ebo v eb =5v,i c =0 5 ma collector-emitter sustaining voltage v ceo i c =50ma,i b =0 80 v v ce =1v,i c = 1 a 100 320 v ce =1v,i c =4a 30 collector-emitter saturation voltage v ce (sat) i c =4a,i b = 0.4a 0.25 0.5 v base-emitter saturation voltage v be (sat) i c =4a, i b = 0.4a 0.9 1.4 v transition frequency ft v ce =4v,i c =1a 10 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 200 pf storage time turn-on time t on 0.4 storage time storage time t stg 2.5 s storage time fall time t f 0.5 dc current gain h fe 2SD2414 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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